Transport in Mosfet's, Modfet's and Hemt's
نویسندگان
چکیده
This contribution is intended to review the state-ofthe-art in numerical simulation of particular transistor devices within our institute. Much emphasis is laid on the discussion of recent refinements to the carrier transport model which primarily is based on the so-called enhanced drift-diffusion equations with two essential extensions: On the one hand, carrier heating properly is taken into account using the Monte Carlo method {hybrid model), and on the other hand the one dimensional Schrodinger equation is introduced for the simulation of the charge-control in order to obtain satisfactory results for strained-layer Si/Ge heterostructure devices. The presented procedure leads to the self-consistent inclusion of quantum-mechanical effects in the simulation. Simulation results of miniaturized MOS transistors are discussed which have been obtained by our simulator MIN/MOS.
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تاریخ انتشار 2014